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| geometry process details principal device types cmpt404a mps404a gross die per 5 inch wafer 16,986 process cp734v small signal transistors pnp - chopper transistor chip process epitaxial planar die size 31.5 x 31.5 mils die thickness 7.0 mils base bonding pad area 4.7 x 6.7 mils emitter bonding pad area 4.7 x 8.7 mils top side metalization al - 30,000? back side metalization au - 18,000? www.centralsemi.com r2 (22-march 2010)
process cp734v typical electrical characteristics www.centralsemi.com r2 (22-march 2010) |
Price & Availability of CP734V10
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